SSM6J08FU power management switch dc-dc converter small package low on resistance : r on = 0.18 ? (max) (@v gs = ? 4 v) : r on = 0.26 ? (max) (@v gs = ? 2.5 v) low gate threshold voltage maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 12 v dc i d 1.3 drain current pulse i dp (note 2) 2.6 a drain power dissipation p d (note 1) 300 mw channel temperature t ch 150 c storage temperature range t stg 55~150 c note1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32 mm 2 6) fig: 1. note2: the pulse width limited by max channel temperature. marking equivalent circuit fig 1: 25.4 mm 25.4 mm 1.6 t, cu pad: 0.32 mm 2 6 handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm weight: 6.8 mg (typ.) 0.4 mm 0.8 mm 6 k d d 4 1 2 3 5 4 1 2 3 6 5 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs 12 v, v ds 0 1 a v (br) dss i d 1 ma, v gs 0 20 drain-source breakdown voltage v (br) dsx i d 1 ma, v gs 12 v 8 v drain cut-off current i dss v ds 20 v, v gs 0 1 a gate threshold voltage v th v ds 3 v, i d 0.1 ma 0.5 1.1 v forward transfer admittance y fs v ds 3 v, i d 0.65 a (note 3) 1.3 2.7 s i d 0.65 a, v gs 4 v (note 3) 140 180 i d 0.65 a, v gs 2.5 v (note 3) 200 260 drain-source on resistance r ds (on) i d 0.65 a, v gs 2.0 v (note 3) 260 460 m input capacitance c iss v ds 10 v, v gs 0, f 1 mhz 370 pf reverse transfer capacitance c rss v ds 10 v, v gs 0, f 1 mhz 73 pf output capacitance c oss v ds 10 v, v gs 0, f 1 mhz 116 pf turn-on time t on 33 ns switching time turn-off time t off v dd 10 v, i d 0.65 a, v gs 0~ 2.5 v, r g 4.7 47 ns note 3: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) v th v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 2.5 v or higher to turn on this product. (c) v out t f t on 90% 10% 0 v 2.5 v 90% 10% t off t r v ds ( on ) v dd (b) v in v dd 10 v r g 4.7 d.u .
1% v in : t r , t f
5 ns common source ta 25c v dd out in 0 2.5 v 10 s r g i d (a) test circuit SSM6J08FU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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